Title: A Simulation Case Study Of Semiconductors For Advanced Processors: A graduate useful study
Publisher: LAP LAMBERT Academic Publishing
Publication Date: 2016
Language: English
ISBN 10: 365994937X
ISBN 13: 9783659949371
Binding: Soft cover
Condition: New

About this title

Synopsis

The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits.

About the Author

N.S.Murti Sarma is a professor of Electronics and communications Engineering of Hosting College. P.Pradeep is identifed as a successful graduate research scholar by research assessment committee . Dr.S.P.Venumadhavarao is director of R&D of SNIST, Hyderabad.

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