Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic

Mark Hickey

ISBN 10: 3639019997 / ISBN 13: 9783639019995

Published by Saarbrücken : VDM Verlag Dr. Müller, 2008

About this Item

Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch.

Seller Inventory # INF1000344446

Bibliographic Details

• Title: Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic
• Publisher: Saarbrücken : VDM Verlag Dr. Müller
• Publication Date: 2008
• Language: English
• ISBN 10: 3639019997
• ISBN 13: 9783639019995
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 12D millimeters 220 millimeters width by 150 millimeters height by 12 millimeters depth
• Weight: 328 grams

About this title

Synopsis

The injection of spin polarised electrons into semiconductors is a fundamentalchallenge in the emergent field of spin electronics. This work isan investigation into spin injection from magnetic thin film contactsinto (100) GaAs/InGaAs quantum wells in spin light emitting diodes(spin LEDs). This structure is relevant to many quantum dot devicelayers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, externaloptical efficiency and temperature.Further, the Heusler alloys Co2TiSn and Co2CrAl are investigatedthrough ab initio electronic structure calculations as potentially highlypolarised spin injectors. Pronounced minority spin band gaps were found in these alloysand while majority spins are metallic, minority spins undergo hole-likedispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a moreefficient spin injector and gives room temperature results. The biasdependent spin injection shows a decrease at higher voltages due tohot electron spin transport in the semiconductor and shows similartrends for both types of spin injector.

About the Author

Mark Hickey graduated from Univeristy College Cork with a degree in Physics and Applied Mathematics in 2002. He then went on to get a PhD in physics at the University of Cambridge in 2005, in the group of Prof. Sir Michael Pepper. Having worked as research fellow in the University of Leeds, he is now a Fulbright Scholar at MIT in the U.S.