Stress Analysis of Silicon Carbide Microelectromechanical Systems Using Raman Spectroscopy (Paperback or Softback)

During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Government and industry are looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to analyze poly-silicon MEMS devices made with the Multi-User MEMS Process (MUMPS). Micro-Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to validate the use of Raman spectroscopy to analyze the stress in MEMS made of silicon carbide (SiC) using the Multi-User Silicon Carbide surface micromachining (MUSiC) process. Surface interferometry of fixed-fixed beam arrays and comb drive resonance test are employed to determine stress and compare it to the Raman values. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC. Raman spectra of 1- to 2-μm thick 3C-SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates are presented as an attempt to establish a baseline spectra for 3C-SiC, the poly-type of SiC found in MEMS made with the MUSiC process.

This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.

This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.

As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.