Sub-Micron Semiconductor Devices : Design and Applications

Ashish Raman

ISBN 10: 0367648105 / ISBN 13: 9780367648107

Published by CRC Press, 2024

About this Item

nach der Bestellung gedruckt Neuware - Printed after ordering - This text discusses novel semiconductor devices including nanostructure field effect transistor, photodiodes, high-electron-mobility transistor, and oxide-based devices. It covers sub-micron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devises, optimization techniques and application in detail.

Seller Inventory # 9780367648107

Bibliographic Details

• Title: Sub-Micron Semiconductor Devices : Design and Applications
• Publisher: CRC Press
• Publication Date: 2024
• Language: English
• ISBN 10: 0367648105
• ISBN 13: 9780367648107
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 254W x 178H x 22D millimeters 254 millimeters width by 178 millimeters height by 22 millimeters depth
• Weight: 768 grams

About this title

Synopsis

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.

The book:

• Covers novel semiconductor devices with submicron dimensions
• Discusses comprehensive device optimization techniques
• Examines conceptualization and modeling of semiconductor devices
• Covers circuit and sensor-based application of the novel devices
• Discusses novel materials for next-generation devices

This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

About the Author

Ashish Raman is presently working as Assistant Professor at Dr. B. R. Ambedkar National Institute of Technology. He is working as Principal investigator and member of various funded projects, funded by Science and Engineering Reaearch Board (SERB), Minestry of Electroncis and IT (MeitY), FIST, ISRO and many more projects.

Deep Shekhar is associated as faculty in the Department of Electronics and Communication Engineering at National Institute of Technology, Jalandhar since 2016. He has expertise in solid state Devices, Anlog CMOS integrated Circuits, Nano scale Device design and simulation etc.

Naveen Kumar is currently working as Research Associate at University of Glasgow, Scotland. His main areas of research interest are Semiconductor Device Physics, MEMS/NEMS, Spintronics, etc.