Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis

Sarkar, Angsuman

ISBN 10: 3659126098 / ISBN 13: 9783659126093

Published by LAP LAMBERT Academic Publishing, 2014

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Bibliographic Details

• Title: Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2014
• Language: English
• ISBN 10: 3659126098
• ISBN 13: 9783659126093
• Binding: paperback
• Condition: New
• Book Type: book

About this title

Synopsis

As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.

About the Author

Dr. Angsuman Sarkar is presently serving as an Assistant Professor of Electronics and Communication Engineering in Kalyani Government Engineering College, West Bengal, India. He received the M.Tech degree in VLSI & Microelectronics from Jadavpur University and later he was awarded the Ph.D degree from Jadavpur University.