Ti-Based Schottky Contacts to n-InP: Electronic Device Applications

Varra Rajagopal Reddy (u. a.)

ISBN 10: 6139814928 / ISBN 13: 9786139814923

Published by LAP LAMBERT Academic Publishing, 2018

About this Item

Ti-Based Schottky Contacts to n-InP: Electronic Device Applications | Varra Rajagopal Reddy (u. a.) | Taschenbuch | 148 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139814923 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.

Seller Inventory # 113662870

Bibliographic Details

• Title: Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2018
• Language: English
• ISBN 10: 6139814928
• ISBN 13: 9786139814923
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 10D millimeters 220 millimeters width by 150 millimeters height by 10 millimeters depth
• Weight: 238 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development.