Tunneling Field Effect Transistor Technology

Lining Zhang

ISBN 10: 3319316516 / ISBN 13: 9783319316512

Published by Springer, 2016

About this Item

Druck auf Anfrage Neuware - Printed after ordering - This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Seller Inventory # 9783319316512

Bibliographic Details

• Title: Tunneling Field Effect Transistor Technology
• Publisher: Springer
• Publication Date: 2016
• Language: English
• ISBN 10: 3319316516
• ISBN 13: 9783319316512
• Binding: Buch
• Condition: Neu
• Dimensions: 241W x 160H x 18D millimeters 241 millimeters width by 160 millimeters height by 18 millimeters depth
• Weight: 506 grams

About this title

Synopsis

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

From the Back Cover

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. 

·         Provides comprehensive reference to tunneling field effect transistors (TFETs);

·         Covers all aspects of TFETs, from device process to modeling and applications;

·         Enables design of power-efficient integrated circuits, with low power consumption TFETs.