Understanding the growth of epitaxial InAs/GaAs nanowires : using Electron Microscopy - for future nano-optoelectronics

Language: English

Published by LAP LAMBERT Academic Publishing, 2010

3838341422 / 9783838341422

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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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nach der Bestellung gedruckt Neuware - Printed after ordering - Materials in smaller scales exhibit promising properties that are useful for wide variety of applications. Semiconductor quantum wells and quantum dots are two main examples of low-dimensional systems, where the quantum wells act as two-dimensional systems and the quantum dots act as zero-dimensional systems. Alternatively, semiconductor nanowires act as one-dimensional materials, and they exhibit promising and device applicable properties. These semiconductor nanowires are expected to be the building blocks for future nanoelectronic and nano-optoelectronic device technology. Compositional modulation within an individual nanowire (heterostructure) enables the designing of band structure of a nanowire and thereby allows the fabrication of single nanowire devices. These nanowire heterostructures show many potential properties and consequent applications. However, the fundamental growth mechanisms nanowire heterostructures have not been explored sufficiently due to their complex nature of the growth. In this regard, this book addresses the fundamental issues associated with the growth of epitaxial axial and radial nanowire heterostructures.

Seller Inventory # 9783838341422

Title
Understanding the growth of epitaxial InAs/GaAs nanowires : using Electron Microscopy - for future nano-optoelectronics
Author
Mohan Chand Paladugu
Publisher
LAP LAMBERT Academic Publishing
Publication year
2010
Condition
Neu
Binding
Taschenbuch
Language
English
ISBN 10
3838341422
ISBN 13
9783838341422
Item weight
197 grams
Dimensions
220x150x8 mm

AHA-BUCH GmbH

Einbeck, Germany

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