Hard Cover. Condition: Acceptable. No Jacket. Ex-library with the usual features. The interior is clean and tight. Binding is good. Cover shows light wear. 331 pages. Ex-Library.
Language: English
Published by World Scientific Publishing Comp, 1989
ISBN 10: 9971506785 ISBN 13: 9789971506780
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Language: English
Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Language: English
Published by VDM Verlag Dr. Mïż½ller 2009-09-01, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
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Add to basketCondition: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Language: English
Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Taschenbuch. Condition: Neu. Fabricating Silicon Thin-Film Transistors on Plastic at 300C | Kunigunde Cherenack | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2009 | VDM Verlag Dr. Müller | EAN 9783639192643 | Verantwortliche Person für die EU: OmniScriptum GmbH & Co. KG, Bahnhofstr. 28, 66111 Saarbrücken, info[at]akademikerverlag[dot]de | Anbieter: preigu.
Language: English
Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
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Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Add to basketpaperback. Condition: Good. Good. Dust Jacket NOT present. CD WILL BE MISSING. . SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Cherenack KunigundeDr Kunigunde Cherenack was born in Cape Town, South Africa. She attended the University of Stellenbosch where she received her Bachelor and Master of Science in Engineering. She graduated from Princeton University .
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Add to basketCondition: New. Print on Demand pp. 244 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.
Language: English
Published by VDM Verlag Dr. Mueller Aktiengesellschaft & Co. KG, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Language: English
Published by VDM Verlag Dr. Müller, 2009
ISBN 10: 3639192648 ISBN 13: 9783639192643
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - It is not a trivial task to fabricate displays on plastic and significant challenges arise when clear plastic is used to replace glass as the display substrate. The trend has been to reduce the deposition temperature of amorphous silicon thin-film transistors (a-Si:H TFTs) in the display backplanes on plastic but that results in a-Si:H TFTs with poor stability under gate-bias stress. The goal of this thesis work has been to develop a high-temperature TFT process at 300C on plastic to enable stable backplanes that are competitive with backplanes fabricated on glass. We have investigated back channel passivated and back-channel cut a-Si:H TFTs fabricated on plastic at 300C and have obtained TFTs with a stability under gate-bias stressing equivalent to that of TFTs in commercial backplanes on glass. Next, we looked at ways to mitigate the impact of misalignment at high temperatures that was caused by large strains built into the substrate by device fabrication. We did this by implementing stress control and by developing self-alignment methods between the gate, the channel passivation and the source-drain terminals.