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Published by World Scientific Publishing Company, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Published by World Scientific Publishing Company, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Published by World Scientific Publishing Company, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Published by World Scientific Publishing Company, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Published by World Scientific Publishing Company, 2014
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Published by World Scientific Publishing Company, 2014
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Published by World Scientific Pub Co Inc, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Add to basketHardcover. Condition: Brand New. illustrated edition. 195 pages. 9.75x6.75x0.75 inches. In Stock.
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Published by WORLD SCIENTIFIC PUB CO INC, 2014
ISBN 10: 9814583189 ISBN 13: 9789814583183
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. InhaltsverzeichnisMonte-Carlo Simulation of Ultra-Thin Film Silicon on Insulator MOSFETs (F Gamiz, C Sampedro, L Donetti and A Godoy) Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi-Ballistic Regime (R.
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Buch. Condition: Neu. FRONTIERS IN ELECTRONICS | Iniguez Benjamin | Buch | SEL TOP IN ELEC & SYS | Gebunden | Englisch | 2014 | World Scientific | EAN 9789814583183 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.
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Buch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.