Singh Sarabdeep (16 results)

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover

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  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover

    Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios

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  • Language: English

    Published by CRC Pr I Llc, 2025

    1032876077 / 9781032876078

    • Hardcover

    Seller: Revaluation Books, Exeter, United KingdomRevaluation Books

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    Hardcover. Condition: Brand New. 472 pages. 9.18x6.12x9.45 inches. In Stock.

  • Language: English

    Published by Taylor & Francis Ltd, London, 2025

    1032876077 / 9781032876078

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    Hardcover. Condition: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

  • Language: English

    Published by Taylor & Francis Ltd, London, 2025

    1032876077 / 9781032876078

    • Hardcover
    • Print on Demand

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    Hardcover. Condition: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover
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    Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Ashish Raman works as an associate professor, in the Department of Electronics and Communication Engineering, at Dr. B R Ambedkar National Institute of Technology Jalandhar Punjab, India. His main areas of interest are electronic devices and circu.

  • Language: English

    Published by Taylor & Francis Ltd, London, 2025

    1032876077 / 9781032876078

    • Hardcover
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    Hardcover. Condition: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

  • Language: English

    Published by CRC Press, 2025

    1032876077 / 9781032876078

    • Hardcover
    • Print on Demand

    Seller: preigu, Osnabrück, Germanypreigu

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    Buch. Condition: Neu. Field-Effect Transistors Technology | From Sustainability to Next-Generation VLSI Design | Ashish Raman (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2025 | CRC Press | EAN 9781032876078 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.