ISBN: 9781286861448 - Electrical Activation Studies of Silicon Implanted Alxga1-xn (12 results)

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Taschenbuch. Condition: Neu. Neuware - Electrical activation studies of silicon implanted AlxGa1-xN grown on sapphire substrates were conducted as a function of ion dose, anneal temperature, and anneal time. Silicon ion doses of 1x10 13, 5x10 13, and 1x10 14 cm -2 were implanted in AlxGa1-xN samples with aluminum mole fractions of 0.1 and 0.2 at an energy of 200 keV at room temperature. The samples were annealed at temperatures 1100 to 1350 degrees C and anneal times 20 to 40 minutes. The Hall coefficient and resistivity were measured using room temperature Hall effect measurements. Activation efficiencies of almost 100% were achieved for Al0.2Ga0.8N samples having doses of 5x10 13 cm-2 after annealing at 1350 and 1300 degrees C, respectively, for 20 minutes. After annealing at 1250 degrees C for 20 minutes, 87% efficiency was achieved for Al0.1Ga0.9N implanted with 1x10 14 cm -2 silicon ions. The largest mobility was 89 cm2/V-s for Al0.1Ga0.9N implanted with 1x10 14 cm -2 and 5x10 13 cm-2 silicon ions and annealed at 1250 degrees C for 20 minutes and at 1200 degrees C for 40 minutes, respectively. The optimal anneal condition to maximize electrical activation efficiency and minimize nitrogen dissociation damage for Al0.1Ga0.9N was 1200 degrees C anneal for 30 minutes. The mobilities, sheet carrier concentrations, and electrical activation efficiencies generally increased.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Condition: New. KlappentextrnrnElectrical activation studies of silicon implanted AlxGa1-xN grown on sapphire substrates were conducted as a function of ion dose, anneal temperature, and anneal time. Silicon ion doses of 1x10 13, 5x10 13, and 1x10 14 cm -2 were.

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