Compound Semiconductors Strained Layers (24 results)
- Softcover
Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
Contact seller5-star sellerCondition: New
US$ 153.00
Free ShippingShips within U.S.A.Quantity: Over 20 available
Condition: Brand New. New. Delivery takes 25-30 days. Excellent Customer Service.
- Hardcover
Seller: Basi6 International, Irving, TX, U.S.A.Basi6 International
Contact seller5-star sellerCondition: New
US$ 153.00
Free ShippingShips within U.S.A.Quantity: Over 20 available
Condition: Brand New. New. Delivery takes 25-30 days. Excellent Customer Service.
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
US$ 191.53
US$ 16.16 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New. In.
- Hardcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
Contact seller5-star sellerCondition: New
US$ 191.53
US$ 16.16 shippingShips from United Kingdom to U.S.A.Quantity: Over 20 available
Condition: New. In.
Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
- Hardcover
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, IrelandKennys Bookshop and Art Galleries Ltd.
Contact seller5-star sellerCondition: New
US$ 240.94
US$ 10.98 shippingShips from Ireland to U.S.A.Quantity: 15 available
Condition: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined St…ark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . .
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
US$ 237.89
US$ 3.99 shippingShips within U.S.A.Quantity: 4 available
Condition: New. pp. 352.
- Hardcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
US$ 239.56
US$ 3.99 shippingShips within U.S.A.Quantity: 4 available
Condition: New. pp. 352.
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
Contact seller5-star sellerCondition: Used - Very good
US$ 140.28
US$ 121.37 shippingShips from Germany to U.S.A.Quantity: 1 available
Condition: Gut. Zustand: Gut | Seiten: 356 | Sprache: Englisch | Produktart: Bücher | During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain.…1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
US$ 200.89
US$ 72.44 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1…999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
US$ 200.89
US$ 73.40 shippingShips from Germany to U.S.A.Quantity: 1 available
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1989-1999 hav…e been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.
Compound Semiconductors Strained Layers and Devices (Electronic Materials Series)
Jain, Suresh (Editor) / Willander, Magnus (Editor) / Van Overstraeten, R. (Editor)
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
US$ 271.93
US$ 13.49 shippingShips from United Kingdom to U.S.A.Quantity: 2 available
Paperback. Condition: Brand New. 349 pages. 9.30x6.20x0.80 inches. In Stock.
Compound Semiconductors Strained Layers and Devices
. Ed(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van
- Hardcover
Seller: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
Contact seller5-star sellerCondition: New
US$ 284.80
US$ 10.50 shippingShips within U.S.A.Quantity: 15 available
Condition: New. Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined St…ark Effects. Editor(s): Jain, Suresh C.; Willander, M.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: PHK; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 20. Weight in Grams: 669. . 2000. Hardback. . . . . Books ship from the US and Ireland.
Language: English
Published by Springer US, Springer New York Mär 2014, 2014
- Softcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
Contact seller5-star sellerCondition: New
US$ 191.07
US$ 26.59 shippingShips from Germany to U.S.A.Quantity: 2 available
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible b…y strain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 352 pp. Englisch.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
US$ 162.11
US$ 56.63 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties. 7. Straine…d layer optoelectronic devices. 8. T.
- Hardcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
US$ 162.11
US$ 56.63 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. 1. Introduction. 2. Characterization and growth. 3. Strain and critical thickness. 4. Strain relaxation and defects. 5. Band structure and optical properties. 6. Electrical and magnetic properties.…7. Strained layer optoelectronic devices. 8. T.
More images- Hardcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 168.12
US$ 80.91 shippingShips from Germany to U.S.A.Quantity: 5 available
Buch. Condition: Neu. Compound Semiconductors Strained Layers and Devices | Suresh Jain (u. a.) | Buch | xii | Englisch | 2000 | Springer US | EAN 9780792377696 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Dema…nd.
- Softcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 168.12
US$ 80.91 shippingShips from Germany to U.S.A.Quantity: 5 available
Taschenbuch. Condition: Neu. Compound Semiconductors Strained Layers and Devices | Suresh Jain (u. a.) | Taschenbuch | xii | Englisch | 2014 | Springer | EAN 9781461370000 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Pr…int on Demand.
- Hardcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
US$ 191.07
US$ 69.36 shippingShips from Germany to U.S.A.Quantity: 1 available
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strain. 1…989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 356 pp. Englisch.
- Softcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
US$ 191.07
US$ 69.36 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by st…rain. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 352 pp. Englisch.
- Softcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
Contact seller4-star sellerCondition: New
US$ 248.95
US$ 8.77 shippingShips from United Kingdom to U.S.A.Quantity: 4 available
Condition: New. Print on Demand pp. 352 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
- Hardcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
Contact seller4-star sellerCondition: New
US$ 250.67
US$ 8.77 shippingShips from United Kingdom to U.S.A.Quantity: 4 available
Condition: New. Print on Demand pp. 352 Illus.
- Softcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
Contact seller4-star sellerCondition: New
US$ 270.21
US$ 11.50 shippingShips from Germany to U.S.A.Quantity: 4 available
Condition: New. PRINT ON DEMAND pp. 352.
- Hardcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
Contact seller4-star sellerCondition: New
US$ 270.53
US$ 11.50 shippingShips from Germany to U.S.A.Quantity: 4 available
Condition: New. PRINT ON DEMAND pp. 352.
- Hardcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
Contact seller5-star sellerCondition: New
US$ 266.26
US$ 26.59 shippingShips from Germany to U.S.A.Quantity: 2 available
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu mulation of new materials and devices with enhanced performance made pos sible by strai…n. 1989-1999 have been very good years for the strained-Iayer devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them. 356 pp. Englisch.
