Order Total (1 Item Items):
Shipping Destination:
Field Effect Transistors Technology (34 results)
Skip to main search results
Search filters
Product Type
- All Product Types
- Books (34)
- Magazines & Periodicals (No further results match this refinement)
- Comics (No further results match this refinement)
- Sheet Music (No further results match this refinement)
- Art, Prints & Posters (No further results match this refinement)
- Photographs (No further results match this refinement)
- Maps (No further results match this refinement)
- Manuscripts & Paper Collectibles (No further results match this refinement)
Condition Learn more
Binding
Collectible Attributes
- First Edition (1)
- Signed (No further results match this refinement)
- Dust Jacket (3)
- Seller-Supplied Images (2)
- Not Print on Demand (29)
Language (3)
Free Shipping
Seller Location
Seller Rating
-
Mosfet in Circuit Design: Metal-Oxide-Semiconductor Field-Effect Transistors for Discrete and Integrated-circuit Technology
Published by McGraw-Hill Book Co., New York
Hardcover. Condition: Fair. No Jacket. Readable copy. Pages may have considerable notes/highlighting. ~ ThriftBooks: Read More, Spend Less.
-
FIELD-EFFECT TRANSISTORS Physics, Technology and Applications
Published by Prentice-Hall, Inc. (1966), Englewood Cliffs, NJ, 1966
Seller: Riverow Bookshop, Owego, NY, U.S.A.
Seller rating 5 out of 5 stars
First Edition
Hardcover w/DJ. Condition: Very Good/Good. Black & White Illustrations (illustrator). First Edition. Englewood Cliffs, NJ: Prentice-Hall, Inc. Very Good/Good. (1966). First Edition. Hardcover w/DJ. Sm 4to., 376pp., DJ rubbed, edges frayed .
-
Field-Effect Transistors: Physics, Technology and Applications (Series in Solid State Physical Electronics)
Published by Prentice-Hall, 1966
Hardcover. Condition: UsedGood. Hardcover; surplus library copy with the usual stampings; reference number written on spine; fading and shelf wear to exterior; otherwise in good condition with clean text, firm binding.
-
MOSFET IN CIRCUIT DESIGN. Metal-Oxide Semiconductor, Field-Effect Transistors For Discrete And Integrated-Circuit Technology.
Published by McGraw Hill Company, 1967
Hardcover. Condition: Fine. Dust Jacket Condition: Very Good-. 136 pages. "The material in this book was accumulated over a two-year period during which the author was actively engaged in MOSFET circuit design at Texas Instruments." FINE HARDCOVER, VERY GOOD- DUST JACKET. Size: 8vo - over 7¾" - 9¾" tall.
-
Condition: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
-
Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
-
US$ 39.88
US$ 18.16 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketCondition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,450grams, ISBN:9783642014987.
-
Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: Used. pp. 516.
-
Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: Used. pp. 516.
-
Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Operations Center, 1842
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: Used. pp. 516.
-
Electrical Engineering Series: Field-Effect Transistors: Physics, Technology and Applications
Published by Prentice Hall, 1966
US$ 28.77
US$ 18.16 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketCondition: Fair. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In fair condition, suitable as a study copy. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,900grams, ISBN:
-
MOSFET in Circuit Design: Metal-Oxide-Semiconductor Field-Effect Transistors for Discrete and Integrated-Circuit Technology
Published by McGraw-Hill, 1967
US$ 34.70
US$ 18.16 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketCondition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. In good all round condition. Dust jacket in good condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,700grams, ISBN:
-
Condition: New. Satisfaction Guaranteed or your money back.
-
hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
-
Nanowelded Carbon Nanotubes: From Field-Effect Transistors to Solar Microcells (NanoScience and Technology)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 133.24
US$ 16.00 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
-
Modulation-Doped Field-Effect Transistors: Principles, Design and Technology
Language: English
Published by IEEE Publications,U.S., 1990
ISBN 10: 0879422556 ISBN 13: 9780879422554
Condition: Sehr gut. Zustand: Sehr gut | Seiten: 516 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
-
Nanowelded Carbon Nanotubes: From Field-Effect Transistors to Solar Microcells (NanoScience and Technology)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 159.40
US$ 16.00 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
-
-
US$ 206.13
US$ 8.68 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketCondition: New.
-
-
-
Field-Effect Transistors Technology : From Sustainability to Next-Generation VLSI Design
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 221.43
US$ 20.03 shipping
Ships from United Kingdom to U.S.A.Quantity: 10 available
Add to basketCondition: New.
-
US$ 213.16
US$ 33.38 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
-
US$ 233.79
US$ 33.38 shipping
Ships from United Kingdom to U.S.A.Quantity: 1 available
Add to basketHardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
-
Field-Effect Transistors Technology : From Sustainability to Next-Generation VLSI Design
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 248.44
US$ 20.03 shipping
Ships from United Kingdom to U.S.A.Quantity: 10 available
Add to basketCondition: As New. Unread book in perfect condition.
-
Condition: As New. Unread book in perfect condition.
-
Condition: New.
-
US$ 376.79
US$ 16.69 shipping
Ships from United Kingdom to U.S.A.Quantity: 2 available
Add to basketHardcover. Condition: Brand New. 472 pages. 9.18x6.12x9.45 inches. In Stock.
-
Hardcover. Condition: New. HardCover Pub Date: 2011 08 Pages: 256 in Publisher: Science Press organic field-effect transistor is the basic building blocks of organic circuit. is also a powerful tool to analyze the transmission performance of organic semiconductor. Based organic field-effect transistors. displays. electronic paper. RF trademarks leave people's vision. to herald the organic field effect transistor has a great prospect. Hu Wenping organic field effect transistor is divided into 10 chapters. the system. co.
-
Field-Effect Transistors Technology (Hardcover)
Language: English
Published by Taylor & Francis Ltd, London, 2025
ISBN 10: 1032876077 ISBN 13: 9781032876078
Hardcover. Condition: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
