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Gan Transistor Modeling Power by Chauhan Yogesh (11 results)
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Condition: As New. Unread book in perfect condition.
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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 268.79
US$ 15.86 shipping from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
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Gan Transistor Modeling for Rf and Power Electronics : Using the Asm-hemt Model
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 265.91
US$ 19.86 shipping from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New.
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Gan Transistor Modeling for Rf and Power Electronics : Using the Asm-hemt Model
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 295.34
US$ 19.86 shipping from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: As New. Unread book in perfect condition.
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Condition: New. Über den AutorYogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design.
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GaN Transistor Modeling for RF and Power Electronics : Using The ASM-HEMT Model
Published by Elsevier Science Publishing Co Inc Mai 2024, 2024
ISBN 10: 0323998712 ISBN 13: 9780323998710
Language: English
Taschenbuch. Condition: Neu. Neuware - GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.
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Paperback. Condition: Brand New. 425 pages. 9.00x6.00x0.43 inches. In Stock. This item is printed on demand.
