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Technology Cad Computer Simulation by Dutton Robert (14 results)
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Condition: New. SUPER FAST SHIPPING.
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US$ 261.27
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US$ 261.73
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Technology CAD ? Computer Simulation of IC Processes and Devices (The Springer International Series in Engineering and Computer Science, 243)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 294.90
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
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Condition: New. pp. 396.
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Technology CAD - Computer Simulation of IC Processes and Devices
Published by Springer US, Springer New York, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Language: English
US$ 293.77
Convert currencyUS$ 74.29 shipping from Germany to U.S.A.Quantity: 1 available
Add to basketBuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .
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US$ 368.60
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Technology CAD: Computer Simulation of IC Processes and Devices
Published by Springer, New York, 2012
Seller: 32.1 Rare Books + Ephemera, IOBA, ESA, Princeton, NJ, U.S.A.
Association Member: IOBA
Seller rating 5 out of 5 stars
Hardcover. Condition: Very Good. 8vo., 396 pp. Black and white illustrations. Index.
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US$ 237.09
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Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 .
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US$ 237.09
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Add to basketGebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 .
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Technology CAD - Computer Simulation of IC Processes and Devices
Published by Springer US, Springer New York Jul 1993, 1993
ISBN 10: 0792393791 ISBN 13: 9780792393795
Language: English
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
US$ 282.40
Convert currencyUS$ 69.89 shipping from Germany to U.S.A.Quantity: 1 available
Add to basketBuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium . . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects . . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction . . 197 5.2 The MOS Capacitor . . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction . 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis . 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model .Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 396 pp. Englisch.
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US$ 371.63
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Add to basketCondition: New. Print on Demand pp. 396 49:B&W 6.14 x 9.21 in or 234 x 156 mm (Royal 8vo) Perfect Bound on White w/Gloss Lam.
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US$ 401.99
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Add to basketCondition: New. PRINT ON DEMAND pp. 396.
