The electrical hazards on the germination of seeds | Project experiments on germination of seeds

Amitava Ghorai

ISBN 10: 3846509213 / ISBN 13: 9783846509210

Published by LAP LAMBERT Academic Publishing, 2012

About this Item

The electrical hazards on the germination of seeds | Project experiments on germination of seeds | Amitava Ghorai | Taschenbuch | 116 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783846509210 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

Seller Inventory # 106131004

Bibliographic Details

• Title: The electrical hazards on the germination of seeds | Project experiments on germination of seeds
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3846509213
• ISBN 13: 9783846509210
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 8D millimeters 220 millimeters width by 150 millimeters height by 8 millimeters depth
• Weight: 191 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

This book compiles three dissertations on experimental projects based on pollution hazards due to electric field on the germination of seeds. The sprout length of gram and pea seeds during the time of germination of some seeds in open-air condition decreases with increase in electric field and voltage. Corresponding graphs show non-linear variations. The cut-off or threshold voltage at which germination stops, is also determined by extrapolation and the corresponding electric field is computed. Thus electric field has negative effect on the germination of seeds. This may have an impact in agriculture sector, specifically, in the process of preservation of seeds in cold storages.

About the Author

Dr. Amitava Ghorai is Associate Professor of Physics at Maulana Azad College. His doctoral work on the study of point defects in solids and thin films at IACS, Kol-32 awarded him Ph.D. degree from Jadavpur University in 1989. Recently point defects are considered using model potentials and exchange and correlations.