Gate Stack and Silicide Issues in Silicon Processing II : Symposium Held April 17-19, 2001, San Francisco, California, U. S. A.

Campbel, S. A. , L. A. Clevenger, P. B. Griffin & C. C. Hobbs (editors)

ISBN 10: 1558996060 / ISBN 13: 9781558996069

Published by Materials Research Society, Warrendale, Pennsylvania, 2002

About this Item

With illustrations. Stamped Damaged to verso title page. Otherwise new. ; Hardcover; Octavo; As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.

Seller Inventory # 21203

Bibliographic Details

• Title: Gate Stack and Silicide Issues in Silicon Processing II : Symposium Held April 17-19, 2001, San Francisco, California, U. S. A.
• Publisher: Materials Research Society, Warrendale, Pennsylvania
• Publication Date: 2002
• Language: English
• ISBN 10: 1558996060
• ISBN 13: 9781558996069
• Binding: Original Boards
• Edition: First Edition; First Edition.
• Condition: As New
• Dust Jacket Condition: No Dust Jacket

About this title

Synopsis

As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL.

Book Description

As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide.