Point Defects in Semiconductors II: Experimental Aspects: Volume 2 ( # 35 Springer Series in Solid-State Sciences)

Bourgoin, J. / M Lannoo

ISBN 10: 3540115153 / ISBN 13: 9783540115151

Published by Springer Verlag Berlin, 1983

About this Item

Published by Springer-verlag Berlin in 1983, here is the first hardback printing of J.Bourgoin and M.Lannoo's Point Defects in Semiconductors II: Experimental Aspects (Stringer Series in Solid-State Sciences #35). Paper covered brown boards, white/orange spine and front cover lettering, 295 illustrated pages the book is in very good condition with the sticker of a previous owner, eminent Physicist Dr A.M.Stoneham applied to the top of the front free end paper and some very light rubbing to the edges of the boards.

Seller Inventory # 12558

Bibliographic Details

• Title: Point Defects in Semiconductors II: Experimental Aspects: Volume 2 ( # 35 Springer Series in Solid-State Sciences)
• Publisher: Springer Verlag Berlin
• Publication Date: 1983
• Language: English
• ISBN 10: 3540115153
• ISBN 13: 9783540115151
• Binding: Hardcover
• Edition: 1st Edition
• Condition: Very Good
• Dust Jacket Condition: No Jacket

About this title

Synopsis

In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc­ ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest­ ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im­ perfections.