Semiconductor Interfaces : Formation and Properties. Proceedings of the Workshop, les Houches, France, February 24 - March 6, 1987

ISBN 10: 3540183280 / ISBN 13: 9783540183280

Published by Springer, 1987

About this Item

Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.

Seller Inventory # 57512929-20

Bibliographic Details

• Title: Semiconductor Interfaces : Formation and Properties. Proceedings of the Workshop, les Houches, France, February 24 - March 6, 1987
• Publisher: Springer
• Publication Date: 1987
• Language: English
• ISBN 10: 3540183280
• ISBN 13: 9783540183280
• Binding: Hardcover
• Edition: 1st Edition.
• Condition: Good
• Weight: 1.742 pounds

About this title

Synopsis

The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom­ mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel­ oped, powerful techniques such as scanning tunneling microscopy, high reso­ lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.