Doping Engineering for Front-End Processing: Volume 1070 (MRS Proceedings) - Softcover

Softcover

ISBN 10: 1107408547 ISBN 13: 9781107408548

Publisher: Cambridge University Press, 2014

Synopsis

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

About this title

Book Description

The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

Edition details

• Publisher: Cambridge University Press
• Publication date: 2014
• Language: English
• ISBN 10: 1107408547
• ISBN 13: 9781107408548
• Binding: Paperback
• Edition number: 1
• Number of pages: 336
• Editor: Pawlak B. J., Pelaz M. L., Law M., Surugo K.