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ISBN 10: 1107408547 ISBN 13: 9781107408548
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Published by Cambridge University Press, 2014
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Published by Cambridge University Press, 2008
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Published by Cambridge University Press, 2008
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Language: English
Published by Materials Research Society, 2008
ISBN 10: 160511040X ISBN 13: 9781605110400
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Add to basketCondition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Pawlak, B. J.; Pelaz, M. L.; Law, M.; Surugo, K. Series: MRS Proceedings. Num Pages: 319 pages, Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 23. Weight in Grams: 568. . 2008. Hardback. . . . .
Language: English
Published by Materials Research Society, 2008
ISBN 10: 160511040X ISBN 13: 9781605110400
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Pawlak, B. J.; Pelaz, M. L.; Law, M.; Surugo, K. Series: MRS Proceedings. Num Pages: 319 pages, Illustrations. BIC Classification: TGM. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 23. Weight in Grams: 568. . 2008. Hardback. . . . . Books ship from the US and Ireland.
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Published by Materials Research Society, 2008
ISBN 10: 160511040X ISBN 13: 9781605110400
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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Published by Cambridge University Press, Cambridge, 2014
ISBN 10: 1107408547 ISBN 13: 9781107408548
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Paperback. Condition: new. Paperback. Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
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Published by Cambridge University Press, 2014
ISBN 10: 1107408547 ISBN 13: 9781107408548
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Add to basketPaperback. Condition: Brand New. 1st edition. 336 pages. 9.02x5.98x0.71 inches. In Stock. This item is printed on demand.
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Published by Cambridge University Press, 2014
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Published by Cambridge University Press, 2014
ISBN 10: 1107408547 ISBN 13: 9781107408548
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Published by Cambridge University Press, 2014
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Add to basketPaperback. Condition: new. Paperback. Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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ISBN 10: 1107408547 ISBN 13: 9781107408548
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding s.
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Published by Cambridge University Press, Cambridge, 2014
ISBN 10: 1107408547 ISBN 13: 9781107408548
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Paperback. Condition: new. Paperback. Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.
Language: English
Published by Materials Research Society, 2008
ISBN 10: 160511040X ISBN 13: 9781605110400
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Add to basketHardcover. Condition: Brand New. 319 pages. 9.00x6.00x0.75 inches. In Stock. This item is printed on demand.
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ISBN 10: 160511040X ISBN 13: 9781605110400
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ISBN 10: 160511040X ISBN 13: 9781605110400
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Published by Cambridge University Press, 2008
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Add to basketGebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. InhaltsverzeichnisPreface Part I. Ultra Shallow Junctions I Part II. Shallow Junction Contacting Part III. Poster Session Part IV. Ultra Shallow Junctions II Part V. Solid Phase Epitaxial Regrowth Part VI. Modeling and Simulation .