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Zinc Oxide - A Material for Micro- and Optoelectronic Applications: Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for ... II: Mathematics, Physics and Chemistry, 194) - Softcover
Synopsis
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
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- PublisherSpringer
- Publication date2005
- ISBN 10 1402034741
- ISBN 13 9781402034749
- BindingPaperback
- Number of pages256
- EditorNickel Norbert H., Terukov Evgenii
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Zinc Oxide, A Material for Micro- and Optoelectronic Applications
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Springer-Verlag New York Inc., 2005
ISBN 10: 1402034741
ISBN 13: 9781402034749
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Condition: New. Reviews the experimental and theoretical studies in the field of ZnO. This book discusses the chapters that reflect the topics during the NATO Advanced Research Workshop, which brought together researchers from NATO countries, Russia, Ukraine, and Kazakhstan to encourage cross fertilization and dissemination of the advances in this research field. Editor(s): Nickel, Norbert H. (Hahn-Meitner-Institut Berlin); Terukov, Evgenii. Series: NATO Science Series II. Num Pages: 256 pages, biography. BIC Classification: TGM. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 13. Weight in Grams: 370. . 2005. Paperback. . . . . Seller Inventory # V9781402034749
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Zinc Oxide, A Material for Micro- and Optoelectronic Applications
Published by
Springer-Verlag New York Inc., 2005
ISBN 10: 1402034741
ISBN 13: 9781402034749
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Softcover
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Condition: New. Reviews the experimental and theoretical studies in the field of ZnO. This book discusses the chapters that reflect the topics during the NATO Advanced Research Workshop, which brought together researchers from NATO countries, Russia, Ukraine, and Kazakhstan to encourage cross fertilization and dissemination of the advances in this research field. Editor(s): Nickel, Norbert H. (Hahn-Meitner-Institut Berlin); Terukov, Evgenii. Series: NATO Science Series II. Num Pages: 256 pages, biography. BIC Classification: TGM. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 13. Weight in Grams: 370. . 2005. Paperback. . . . . Books ship from the US and Ireland. Seller Inventory # V9781402034749
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Zinc Oxide - A Material for Micro- And Optoelectronic Applications : Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- And Optoelectronic Applications, Held in St. Petersburg, Russia, from 23 to 25 June 2004
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Taschenbuch. Condition: Neu. Neuware - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. Seller Inventory # 9781402034749
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