Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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9781498745123: Nitride Wide Bandgap Semiconductor Material and Electronic Devices

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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ISBN 10: 1498745121 ISBN 13: 9781498745123
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Book Description Taylor Francis Inc, United States, 2016. Hardback. Book Condition: New. Language: English . Brand New Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Bookseller Inventory # AA69781498745123

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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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Book Description Taylor Francis Inc, United States, 2016. Hardback. Book Condition: New. Language: English . Brand New Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Bookseller Inventory # AA69781498745123

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Book Description 2016. HRD. Book Condition: New. New Book. Shipped from US within 10 to 14 business days. Established seller since 2000. Bookseller Inventory # VT-9781498745123

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HAO, YUE; ZHANG, JIN FENG; ZHANG, JIN CHENG
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Book Description CRC Press, 2016. Hardback. Book Condition: NEW. 9781498745123 This listing is a new book, a title currently in-print which we order directly and immediately from the publisher. For all enquiries, please contact Herb Tandree Philosophy Books directly - customer service is our primary goal. Bookseller Inventory # HTANDREE01224989

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Book Description CRC Pr I Llc, 2016. Hardcover. Book Condition: Brand New. 448 pages. 10.00x7.00x1.00 inches. In Stock. Bookseller Inventory # __1498745121

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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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Book Description Taylor Francis Inc, United States, 2016. Hardback. Book Condition: New. Language: English . This book usually ship within 10-15 business days and we will endeavor to dispatch orders quicker than this where possible. Brand New Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Bookseller Inventory # BTE9781498745123

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Book Description 2016. Hardcover. Book Condition: New. Hardcover. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis o.Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. 368 pages. 0.884. Bookseller Inventory # 9781498745123

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Yue Hao; Jin Feng Zhang; Jin Cheng Zhang
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