Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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9781498745123: Nitride Wide Bandgap Semiconductor Material and Electronic Devices
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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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Book Description Taylor & Francis Inc, United States, 2016. Hardback. Condition: New. Language: English. Brand new Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Seller Inventory # AA69781498745123

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Yue Hao (author), Jin Feng Zhang (author), Jin Cheng Zhang (author)
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Yue Hao, Jin Feng Zhang, Jin Cheng Zhang
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Book Description Taylor & Francis Inc, United States, 2016. Hardback. Condition: New. Language: English. Brand new Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Seller Inventory # AA69781498745123

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Book Description CRC Press 2016-11-01, 2016. Condition: New. Brand new book, sourced directly from publisher. Dispatch time is 4-5 working days from our warehouse. Book will be sent in robust, secure packaging to ensure it reaches you securely. Seller Inventory # NU-TNFPD-00056355

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HAO, YUE; ZHANG, JIN FENG; ZHANG, JIN CHENG
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Book Description CRC Press. Condition: BRAND NEW. BRAND NEW Hardcover - This title is now printed on demand - please allow added time for shipment! A Brand New Quality Book from a Full-Time Veteran Owned Bookshop in business since 1992!. Seller Inventory # 3509626

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Book Description CRC Pr I Llc, 2016. Hardcover. Condition: Brand New. 448 pages. 10.00x7.00x1.00 inches. In Stock. Seller Inventory # __1498745121

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Book Description Taylor & Francis Inc, United States, 2016. Hardback. Condition: New. Language: English. Brand new Book. This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. Seller Inventory # BTE9781498745123

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