New Prospects of Integrating Low Substrate Temperatures with Scaling-Sustained Device Architectural Innovation (Synthesis Lectures on Emerging Engineering Technologies) - Softcover

Ashraf, Nabil Shovon; Alam, Shawon; Alam, Mohaiminul

Softcover

ISBN 10: 1627058540 ISBN 13: 9781627058544

Publisher: Morgan & Claypool Publishers, 2016

Synopsis

In order to sustain Moore's Law-based device scaling, principal attention has focused on toward device architectural innovations for improved device performance as per ITRS projections for technology nodes up to 10 nm. Efficient integration of lower substrate temperatures (<300K) to these innovatively configured device structures can enable the industry professionals to keep up with Moore's Law-based scaling curve conforming with ITRS projection of device performance outcome values. In this prospective review E-book, the authors have systematically reviewed the research results based on scaled device architectures, identified key bottlenecks to sustained scaling-based performance, and through original device simulation outcomes of conventional long channel MOSFET extracted the variation profile of threshold voltage as a function of substrate temperature which will be instrumental in reducing subthreshold leakage current in the temperature range 100K-300K. An exploitation methodology to regulate the die temperature to enable the efficient performance of a high-density VLSI circuit is also documented in order to make the lower substrate temperature operation of VLSI circuits and systems on chip process compatible.

About this title

About the Author

Nabil Shovon Ashraf was born in Dhaka, Bangladesh, in 1974. He obtained his Bachelor's degree in Electrical Engineering (EE) from Indian Institute of Technology Kanpur, India, in 1997, Master's degree in EE from University of Central Florida, Orlando, Florida, in 1999, and Doctorate degree in EE from Arizona State University, Tempe, Arizona, in 2011. He was a post doctoral researcher in the department of electrical engineering of Arizona State University from 2011-2014. He was employed as design engineer in RF Monolithics Inc., a surface acoustic wave (SAW) based filter design company in Dallas, Texas, from 1999-2001. From 2003 till 2006 he served on the faculty of the department of Electrical & Electronic Engineering of Islamic University of Technology, Gazipur, Bangladesh, as Assistant Professor. In fall 2014, he became Assistant Professor in the department of Electrical and Computer Engineering (ECE) of North South University, Dhaka, Bangladesh. He has been listed in Marquis Who's Who in America in 2016 (70th platinum edition) and also in 2015 (69th edition). Dr. Ashraf has, to-date, published six peer reviewed journal papers (two IEEE EDS society) and around 14 conference papers (three IEEE EDS society). He has also contributed to two book chapters on interface trap induced reliability aspects (threshold voltage fluctuations) of nanoscale devices. He specializes in the area of device physics and modeling analysis of scaled devices for enabling improved device performance at the scaled node of current MOSFET device architectures.

Edition details

• Publisher: Morgan & Claypool Publishers
• Publication date: 2016
• ISBN 10: 1627058540
• ISBN 13: 9781627058544
• Binding: Paperback
• Language: English
• Number of pages: 82