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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (Analog Circuits and Signal Processing, 122) - Hardcover
Synopsis
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
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About the Author
Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.
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- PublisherSpringer
- Publication date2013
- ISBN 10 3319011642
- ISBN 13 9783319011646
- BindingHardcover
- Number of pages214
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (Analog Circuits and Signal Processing, 122)
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch (Analog Circuits and Signal Processing) by Srivastava, Viranjay M., Singh, Ghanshyam [Hardcover ]
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. 216 pp. Englisch. Seller Inventory # 9783319011646
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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Gebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFETExplains the design of RF switches using the technologies presented and simulates s. Seller Inventory # 4496070
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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ISBN 10: 3319011642
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. Seller Inventory # 9783319011646
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MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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