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This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
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The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis given to todays advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate student level. The second part considers the physics and modeling of bipolar transistors in detail. Part 3 describes basic circuit configurations, aspects of process integration and applications.
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- PublisherSpringer
- Publication date2012
- ISBN 10 364263205X
- ISBN 13 9783642632051
- BindingPaperback
- Number of pages678
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High-Frequency Bipolar Transistors
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ISBN 10: 364263205X
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Hot topic in modern microelectronicsFast single and integrated transistors as well as integrated bipolar circuits are treatedThis modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silic. Seller Inventory # 5065523
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High-Frequency Bipolar Transistors (Springer Series in Advanced Microelectronics) by Reisch, Michael [Paperback ]
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High-Frequency Bipolar Transistors
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ISBN 10: 364263205X
ISBN 13: 9783642632051
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations. 680 pp. Englisch. Seller Inventory # 9783642632051
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High-Frequency Bipolar Transistors
Published by
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ISBN 10: 364263205X
ISBN 13: 9783642632051
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides a rather comprehensive presentation of the physics and modeling of high-frequency bipolar transistors with particular emphasis given to silicon-based devices. I hope it will be found useful by those who do as well as by those who intend to work in the field, as it compiles and extends material presented in numerous publications in a coherent fashion. I've worked on this project for years and did my best to avoid errors. De spite all efforts it is possible that 'something' has been overlooked during copy-editing and proof-reading. If you find a mistake please let me know. Michael Reisch Kempten, December 2002 Notation It is intended here to use the most widely employed notation, in cases where the standard textbook notation is different from the SPICE notation, the latter is used. In order to make formulas more readable, model parameters represented in SPICE by a series of capital letters are written here as one capital letter with the rest in the form of a subscript (e.g. XCJC is used here instead of the XCJC used in the SPICE input). Concerning the use of lower-case and capital letters, the following rules are applied: - Time-dependent large-signal quantities are represented by lower-case let ters. The variables 't, v and p therefore denote time-dependent current, voltage and power values. Seller Inventory # 9783642632051
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High-Frequency Bipolar Transistors (Springer Series in Advanced Microelectronics)
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High-Frequency Bipolar Transistors
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ISBN 10: 364263205X
ISBN 13: 9783642632051
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