Simulation of Semiconductor Processes and Devices 2004 - Softcover

9783709106259: Simulation of Semiconductor Processes and Devices 2004

Softcover

ISBN 10: 3709106257 ISBN 13: 9783709106259

Publisher: Springer, 2011

This specific ISBN edition is currently not available.

Advanced Transport Models for Sub-Micrometer Devices.- NEMO-ID: the First NEGF-Based TCAD Tool.- The Density-Gradient Correction as a Disguised Pilot Wave of de Broglie.- Full Band and Approximated Solutions of the Schr�dinger Equation in Silicon Inversion Layers.- A Hybrid 3D Quantum Mechanical Simulation of FinFETs and Nanowire Devices.- On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices.- Quantum Mechanical Simulation in DG MOSFETs Based on a Tight Binding Green's Function Formalism.- Modeling B Uphill Diffusion in the Presence of Ge.- Ab-initio Calculations To Predict Stress Effects on Boron Solubility in Silicon.- Boron Diffusion in Strained and Strain-Relaxed SiGe.- Modeling Dopant Diffusion in SiGe and SiGeC layers.- Continuum Modeling of Indium To Predict SSR Profiles.- Theoretical Analysis of Stress and Surface Orientation Effects on Inversion Carrier Mobility.- CMOS Circuit Performance Enhancement by Surface Orientation Optimization.- Modeling of Stress Induced Layout Effect on Electrical Characteristics of Advanced MOSFETs.- Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel PMOSFETs.- Three-Dimensional Characterization and Modelling of Stress Distribution in High-Density DRAM Memory Cells.- Strain Optimization To Reduce Gate Leakage Current in MOS Transistors with Silicon Oxynitride Gate Dielectrics by Use of First-Principles Calculations.- Simulation Study of Simple CMOS-Compatible Thin-SOI Vertical Bipolar Transistors on Thin BOX with an Inversion Collector.- Current Collapse Associated with Surface States in GaN-Based HEMT's. Theoretical/Experimental Investigations.- Implications of Gate Misalignment for Ultra-Narrow Multi-Gate Devices.- Source-Side Injection Modeling by Means of the Spherical-Harmonics Expansion of the BTE.- Investigation of a Novel Tunneling Transistor by MEDICI Simulation.- Optimization of BAW Resonator Performance Using Combined Simulation Techniques.- Simulation of GaN-Based Light-Emitting Devices.- On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models.- A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs.- On the Relationship between Carrier Mobility and Velocity in Sub-50 nm MOSFETs via Calibrated Monte Carlo Simulation.- A Method for Determining the Screening Length of the Coulombic Scattering in Non-Degenerate and Degenerate Semiconductors.- 3D Simulation of Process Effects Limiting FinFET Performance and Scalability.- Full Three-Dimensional Analysis of a Non-Volatile Memory Cell.- Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching.- Modeling CVD effects in Atomic Layer Deposition on the Feature Scale.- Defect and Carrier Dynamics in Nanotubes under Electronic Excitations: Time-Dependent Density Functional Approaches.- Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors.- Numerical Performance Analysis of Carbon Nanotube (CNT) Embedded MOSFETs.- Parameter Extraction and Validation of an Electronic and Optical Model for Organic Light-Emitting Devices.- Adaptive Surface Triangulations for 3D Process Simulation.- Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation.- Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys.- Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides.- Physics and Modeling of Radiation Effects in Advanced CMOS Technology Nodes.- Very High Performance, Sub-20 nm, Strained Si and SixGe1_x, Hetero-Structure, Center Channel (CC) NMOS and PMOS DGFETs.- Scalability of FinFETs and Unstrained-Si/Strained-Si FDSOI-MOSFETs.- Device Performance in Conventional and Strained Si n-MOSFETs with High-K Gate Stacks.- Understanding the Role of Strain in Si-Ge Devices.- Electro-Thermal Simulations of Strained-Si MOSFETs under ESD Conditions.- Simulation of the Cross-Coupling among Snap Back Devices under Transient

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