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Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics) - Softcover

 
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From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal

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"... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ...” Microelectronics Journal

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  • PublisherSpringer
  • Publication date2012
  • ISBN 10 3709173345
  • ISBN 13 9783709173343
  • BindingPaperback
  • LanguageEnglish
  • Number of pages372

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ISBN 10:  3211830529 ISBN 13:  9783211830529
Publisher: Springer, 1998
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Schenk, Andreas
Published by Springer, 2012
ISBN 10: 3709173345 ISBN 13: 9783709173343
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Schenk, Andreas
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ISBN 10: 3709173345 ISBN 13: 9783709173343
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Andreas Schenk
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ISBN 10: 3709173345 ISBN 13: 9783709173343
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From the reviews: '. this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [.], and a useful source of reference for experienced users .' Microelectronics Journal 376 pp. Englisch. Seller Inventory # 9783709173343

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Andreas Schenk
Published by Springer Vienna, 2012
ISBN 10: 3709173345 ISBN 13: 9783709173343
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be. Seller Inventory # 5250408

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Andreas Schenk
Published by Springer Vienna, 2012
ISBN 10: 3709173345 ISBN 13: 9783709173343
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems. Seller Inventory # 9783709173343

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Paperback. Condition: Brand New. 367 pages. 9.61x6.69x0.85 inches. In Stock. Seller Inventory # x-3709173345

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