Arbitrary Modeling of TSVs for 3D Integrated Circuits.

Salah, Khaled; et al

ISBN 10: 3319076108 / ISBN 13: 9783319076102

Published by Cham, Springer., 2015

About this Item

ix, 179p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Stamped. ACSP Analog Circuits And Signal Processing. Sprache: Englisch.

Seller Inventory # 1864CB

Bibliographic Details

• Title: Arbitrary Modeling of TSVs for 3D Integrated Circuits.
• Publisher: Cham, Springer.
• Publication Date: 2015
• Language: English
• ISBN 10: 3319076108
• ISBN 13: 9783319076102
• Binding: Hardcover
• Seller catalogs:
  • Technik

About this title

Synopsis

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.

From the Back Cover

This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance, and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis, and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor, and inductive-based communication system, and bandpass filtering.

·Introduces a robust model that captures accurately all the loss modes of a TSV, coupling parasitics between TSVs and the TSV nonlinear capacitance and resistance of the depletion region;

·Enables readers to use a model which is technology dependent and can be used for any TSV configuration;

·Reveals a novel on-chip wireless communication technique, based on TSV spiral inductors;

·Equips readers for fast parasitic extraction of TSVs for 3D IC design.