CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)

ISBN 10: 1605111287 / ISBN 13: 9781605111285

Published by Cambridge University Press, 2009

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Bibliographic Details

• Title: CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)
• Publisher: Cambridge University Press
• Publication Date: 2009
• Language: English
• ISBN 10: 1605111287
• ISBN 13: 9781605111285
• Binding: Hardcover
• Condition: Like New
• Book Type: book

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Synopsis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.