Cmos Gate-stack Scaling Materials, Interfaces and Reliability Implications: Symposium Held April 14-16, 2009, San Francisco, California, U.s.a.: Vol 1155

Butterbaugh, J. (Editor)/ Demkov, a (Editor)/ Harris, R. (Editor)/ Rachmady, W. (Editor)/ Taylor, B. (Editor)

ISBN 10: 1605111287 / ISBN 13: 9781605111285

Published by Materials Research Society, 2009

About this Item

194 pages. 9.13x6.30x0.79 inches. In Stock.

Seller Inventory # x-1605111287

Bibliographic Details

• Title: Cmos Gate-stack Scaling Materials, Interfaces and Reliability Implications: Symposium Held April 14-16, 2009, San Francisco, California, U.s.a.: Vol 1155
• Publisher: Materials Research Society
• Publication Date: 2009
• Language: English
• ISBN 10: 1605111287
• ISBN 13: 9781605111285
• Binding: Hardcover
• Condition: Brand New
• Weight: 0.43 kilograms

About this title

Synopsis

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.