Compact Modeling for MOSFET Devices: Small-Signal Models for Multiple-Gate Transistors

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

Oana Moldovan; PhD. in Electronics Engineering from Universitat Rovira i Virgili, Spain. Postdoctoral researcher at the Universitat Autònoma de Barcelona. Benjamin Iñiguez; PhD. in Physics from the University of the Balearic Islands, Spain. Titular Professor in the Department of Electronic Engineering, Universitat Rovira i Virgili, Spain.