Defect Complexes in Semiconductor Structures

J. Giber

ISBN 10: 3540119868 / ISBN 13: 9783540119869

Published by Springer, Springer Feb 1983, 1983

About this Item

This item is printed on demand - Print on Demand Titel. Neuware -A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III-V compounds.- Vacancy related structure defects in SiO2 - Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III-V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals - the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 320 pp. Englisch.

Seller Inventory # 9783540119869

Bibliographic Details

• Title: Defect Complexes in Semiconductor Structures
• Publisher: Springer, Springer Feb 1983
• Publication Date: 1983
• Language: English
• ISBN 10: 3540119868
• ISBN 13: 9783540119869
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 244W x 170H x 18D millimeters 244 millimeters width by 170 millimeters height by 18 millimeters depth
• Weight: 555 grams