Defects in SiO2 and Related Dielectrics: Science and Technology

. Ed(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L.

ISBN 10: 0792366867 / ISBN 13: 9780792366867

Published by Kluwer Academic Publishers, 2000

About this Item

Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . . Books ship from the US and Ireland.

Seller Inventory # V9780792366867

Bibliographic Details

• Title: Defects in SiO2 and Related Dielectrics: Science and Technology
• Publisher: Kluwer Academic Publishers
• Publication Date: 2000
• Language: English
• ISBN 10: 0792366867
• ISBN 13: 9780792366867
• Binding: Soft cover
• Condition: New

About this title

Synopsis

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.
This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.