Order Total (1 Item Items):
Shipping Destination:
Griscom David L (30 results)
Skip to main search results
Search filters
Product Type
- All Product Types
- Books (30)
- Magazines & Periodicals (No further results match this refinement)
- Comics (No further results match this refinement)
- Sheet Music (No further results match this refinement)
- Art, Prints & Posters (No further results match this refinement)
- Photographs (No further results match this refinement)
- Maps (No further results match this refinement)
- Manuscripts & Paper Collectibles (No further results match this refinement)
Condition Learn more
- New (24)
- As New, Fine or Near Fine (4)
- Very Good or Good (1)
- Fair or Poor (No further results match this refinement)
- As Described (1)
Binding
Collectible Attributes
- First Edition (No further results match this refinement)
- Signed (No further results match this refinement)
- Dust Jacket (No further results match this refinement)
- Seller-Supplied Images (13)
- Not Print on Demand (21)
Language (1)
Price
- Any Price
- Under US$ 25 (No further results match this refinement)
- US$ 25 to US$ 50 (No further results match this refinement)
- Over US$ 50
Free Shipping
Seller Location
Seller Rating
-
The R. A. Weeks International Symposium on Science and Technology of SiO2 and Related Materials.
Language: English
Published by Elsevier Science. 1994., 1994
ISBN 10: 0944904858 ISBN 13: 9780944904855
Hardcover. Condition: sehr gut. Hardcover gr. 8°. xiii, 379 pages, name on title, some small marks of use, sehr gutes Exemplar. in englischer Sprache.
-
Defects in Sio2 and Related Dielectrics : Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Condition: Good. Pages intact with minimal writing/highlighting. The binding may be loose and creased. Dust jackets/supplements are not included. Stock photo provided. Product includes identifying sticker. Better World Books: Buy Books. Do Good.
-
-
-
Defects in Si02 and Related Dielectrics : Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 251.21
US$ 20.14 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New.
-
Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2)
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 261.40
US$ 16.08 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
-
Defects in SiO2 and Related Dielectrics: Science and Technology (NATO Science Series II: Mathematics, Physics and Chemistry, 2)
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 261.40
US$ 16.08 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. In.
-
-
Condition: As New. Unread book in perfect condition.
-
Condition: As New. Unread book in perfect condition.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Dordrecht / Boston / London. Kluwer Academic Publishers. 2000., 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Softcover. Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english).
-
Taschenbuch. Condition: Neu. Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2000 | Springer | EAN 9780792366867 | Verantwortliche Person für die EU: Springer Netherlands, Haberstr. 7, 69126 Heidelberg, buchhandel-buch[at]springer[dot]com | Anbieter: preigu.
-
Defects in Si02 and Related Dielectrics : Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistrySeller: GreatBookPricesUK, Woodford Green, United Kingdom
Seller rating 5 out of 5 stars
US$ 287.66
US$ 20.14 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
Add to basketCondition: As New. Unread book in perfect condition.
-
Defects in SiO2 and Related Dielectrics
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Kluwer Academic Publishers, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Ireland
Seller rating 5 out of 5 stars
Condition: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . .
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Kluwer Academic Publishers, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Seller: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Ireland
Seller rating 5 out of 5 stars
Condition: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . .
-
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, Springer, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, Springer Netherlands, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
-
Defects in SiO2 and Related Dielectrics
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Kluwer Academic Publishers, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Condition: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, G.; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 155 x 34. Weight in Grams: 1061. . 2000. Hardback. . . . . Books ship from the US and Ireland.
-
Defects in Si02 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryUS$ 354.03
US$ 26.85 shipping
Ships from United Kingdom to U.S.A.Quantity: 2 available
Add to basketPaperback. Condition: Brand New. 632 pages. 9.50x6.50x1.50 inches. In Stock.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Kluwer Academic Publishers, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Condition: New. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Editor(s): Pacchioni, Gianfranco; Skuja, Linards; Griscom, David L. Series: NATO Science Series II. Num Pages: 624 pages, 87 black & white illustrations, biography. BIC Classification: PHK; TGM. Category: (G) General (US: Trade); (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 153 x 20. Weight in Grams: 892. . 2000. Softcover reprint of the original 1st ed. 2000. Paperback. . . . . Books ship from the US and Ireland.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
US$ 215.33
US$ 56.88 shipping
Ships from Germany to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
US$ 215.33
US$ 56.88 shipping
Ships from Germany to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch.
-
Buch. Condition: Neu. Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Buch | NATO Science Series II: Mathematics, Physics and Chemistry | viii | Englisch | 2000 | Springer Netherland | EAN 9780792366850 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, Springer Dez 2000, 2000
ISBN 10: 0792366867 ISBN 13: 9780792366867
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.
-
Defects in SiO2 and Related Dielectrics: Science and Technology
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryLanguage: English
Published by Springer Netherlands, Springer Netherlands Dez 2000, 2000
ISBN 10: 0792366859 ISBN 13: 9780792366850
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
Buch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch.
-
Defects in SiO2 and Related Dielectrics
Book 4 of 241: NATO Science Series II: Mathematics, Physics and ChemistryUS$ 337.09
US$ 8.73 shipping
Ships from United Kingdom to U.S.A.Quantity: 4 available
Add to basketCondition: New. Print on Demand pp. 636 Illus.
-
Condition: New. PRINT ON DEMAND pp. 636.
