GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers | Through Monte Carlo Particle-Based Device Simulations

Diego Guerra

ISBN 10: 3847325671 / ISBN 13: 9783847325673

Published by LAP LAMBERT Academic Publishing, 2012

About this Item

GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers | Through Monte Carlo Particle-Based Device Simulations | Diego Guerra | Taschenbuch | 224 S. | Englisch | 2012 | LAP LAMBERT Academic Publishing | EAN 9783847325673 | Verantwortliche Person für die EU: OmniScriptum GmbH & Co. KG, Bahnhofstr. 28, 66111 Saarbrücken, info[at]akademikerverlag[dot]de | Anbieter: preigu.

Seller Inventory # 106635241

Bibliographic Details

• Title: GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers | Through Monte Carlo Particle-Based Device Simulations
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2012
• Language: English
• ISBN 10: 3847325671
• ISBN 13: 9783847325673
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 15D millimeters 220 millimeters width by 150 millimeters height by 15 millimeters depth
• Weight: 352 grams
• Seller catalogs:
  • Bücher

About this title

Synopsis

This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.

About the Author

Diego Guerra received the Ph.D. degree in Electrical Engineering from Arizona State University, Tempe, in 2011. His research interests include the modeling and the small-signal/large-signal characterization of GaN HEMTs for millimeter-wave power amplifiers (he is author and co-author of 15 publications) and InP HEMTsfor terahertz electronics.