Magnetic Memory: Fundamentals and Technology

Tang, Denny D.; Lee, Yuan-Jen

ISBN 10: 0521449642 / ISBN 13: 9780521449649

Published by Cambridge University Press, 2010

About this Item

hardcover 100% of proceeds go to charity! May have signs of use, wear and minor cosmetic defects. Seller Inventory # P-06-4780

Bibliographic Details

Title: Magnetic Memory: Fundamentals and Technology

Publisher: Cambridge University Press

Publication Date: 2010

Binding: Hardcover

Condition: Very Good

About this title

Synopsis:

If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.

Book Description:

If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies.