Title: Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim: 0 (International Series On Advances In Solid State Electronics And Technology)
Publisher: Wspc 2008-06-03
Publication Date: 2008
Language: English
ISBN 10: 9813203315
ISBN 13: 9789813203310
Binding: Paperback
Condition: New

About this title

Synopsis

This volume provides a timely description of the latest compact Mos transistor models for circuit simulation. The first generation Bsim3 and Bsim4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm Mos transistors. This book discusses the second generation Mos transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the Mos transistor channel in order to give one characterization equation.

"About this title" may belong to another edition of this title.

Store Description

Visit Seller's Storefront

Seller's business information

WRAP Ltd
Unit 4, 119 Loverock Rd, Reading, RG30 1DZ, United Kingdom

Sale & Shipping Terms

Terms of Sale

TBA

Shipping Terms

Shipping costs are based on books weighing 2.2 LB, or 1 KG. If your book order is heavy or oversized, we may contact you to let you know extra shipping is required.

Shipping rates from United Kingdom to U.S.A.

Shipping rates from United Kingdom to U.S.A.
Order quantity	14 to 21 business days	14 to 21 business days
First item	US$ 20.45	US$ 20.45

Delivery times are set by sellers and vary by carrier and location. Orders passing through Customs may face delays and buyers are responsible for any associated duties or fees. Sellers may contact you regarding additional charges to cover any increased costs to ship your items.