Studies and Characterization of ZnS Thin Films

Arunkumar Alagesan

ISBN 10: 3330062444 / ISBN 13: 9783330062443

Published by LAP LAMBERT Academic Publishing, 2017

About this Item

nach der Bestellung gedruckt Neuware - Printed after ordering - The II-VI compound semiconductors are of great importance due to their application in various electro-optic devices. Thin films of ZnS find many more applications in the area of opto electronic device fabrication like UV light emitting diodes, blue light emitting diodes, emissive flat screens, electroluminescent devices and antireflection coating in solar cell technology. Several methods have been used to prepare ZnS thin films. We have deposited ZnS films using chemical bath deposition method using sodium hydroxide as a complexing agent. The structural and morphological characteristics of films have been investigated by X-ray diffraction (XRD) and scanning electron microscope. XRD shows deposited film was polycrystalline nature with cubic structure. The grain size is estimated to be in the range of 35-70 nm. The crystallinity of the ZnS film was analysed by HRTEM with the help of the electron diffraction pattern. The films show good optical properties with high transmittance in the visible region and the band gap value were found 3.3 eV - 2.1 eV. ZnS films can be used as buffer layers on CdTe solar cells.

Seller Inventory # 9783330062443

Bibliographic Details

• Title: Studies and Characterization of ZnS Thin Films
• Publisher: LAP LAMBERT Academic Publishing
• Publication Date: 2017
• Language: English
• ISBN 10: 3330062444
• ISBN 13: 9783330062443
• Binding: Taschenbuch
• Condition: Neu
• Dimensions: 220W x 150H x 4D millimeters 220 millimeters width by 150 millimeters height by 4 millimeters depth
• Weight: 107 grams

About this title

Synopsis

The II-VI compound semiconductors are of great importance due to their application in various electro-optic devices. Thin films of ZnS find many more applications in the area of opto electronic device fabrication like UV light emitting diodes, blue light emitting diodes, emissive flat screens, electroluminescent devices and antireflection coating in solar cell technology. Several methods have been used to prepare ZnS thin films. We have deposited ZnS films using chemical bath deposition method using sodium hydroxide as a complexing agent. The structural and morphological characteristics of films have been investigated by X-ray diffraction (XRD) and scanning electron microscope. XRD shows deposited film was polycrystalline nature with cubic structure. The grain size is estimated to be in the range of 35-70 nm. The crystallinity of the ZnS film was analysed by HRTEM with the help of the electron diffraction pattern. The films show good optical properties with high transmittance in the visible region and the band gap value were found 3.3 eV - 2.1 eV. ZnS films can be used as buffer layers on CdTe solar cells.