Daniel Ioan Bilc (3 results)

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  • Language: English

    Published by VDM Verlag Dr. Müller, 2009

    363916959X / 9783639169591

    • Softcover
    • Print on Demand

    Seller: moluna, Greven, Germanymoluna

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    Condition: New

    US$ 46.34

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    Kartoniert / Broschiert. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: BILC DANIEL IOANDaniel I. Bilc was born in Huedin, Romania, 1973. He received hisnB.Sc. in physics from Babes-Bolyai University in 1996. Hencontinued his education in USA at Michigan State University. Fromnthis institution he recei.

  • Language: English

    Published by VDM Verlag Dr. Müller, 2009

    363916959X / 9783639169591

    • Softcover
    • Print on Demand

    Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH

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    Condition: New

    US$ 83.82

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    Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years there have been a revival of interestin discovering and understanding the physicalproperties of novel thermoelectric (TE) materialswith high figure of merit. These materials areprimarily narrow band gap semiconductors. In thisbook, electronic structure calculations were carriedout for several narrow band gap chalcogenide TEmaterials in order to understand their electronic andtransport properties governing their TEcharacteristics. These calculations were performedwithin DFT whereas the transport calculations werecarried out using Boltzmann transport equations. Theeffect of quantum confinement created by the surfacesof Bi2Se3 and Bi2Te3 (impact of interlayer bonding)and their superlattice electronic properties wereinvestigated. The complex materials (K2Bi8Se13,AgPbmSbTe2+m (LAST-m)) were studied. For PbTe andLAST-m materials, which are among the best bulk TE athigh temperatures, transport calculations wereperformed. This study should be useful toprofessionals in the field of thermoelectricity, oranyone interested in electronic and transportproperties of narrow gap semiconductors.

  • Language: English

    Published by VDM Verlag, 2009

    363916959X / 9783639169591

    • Softcover
    • Print on Demand

    Seller: Revaluation Books, Exeter, United KingdomRevaluation Books

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    Condition: New

    US$ 119.22

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    Paperback. Condition: Brand New. 104 pages. 8.66x5.91x0.24 inches. In Stock. This item is printed on demand.