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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC, 2025
ISBN 10: 1025140419 ISBN 13: 9781025140414
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC Mai 2025, 2025
ISBN 10: 1025140419 ISBN 13: 9781025140414
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC Mai 2025, 2025
ISBN 10: 102513527X ISBN 13: 9781025135274
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC, 2025
ISBN 10: 1025140419 ISBN 13: 9781025140414
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC, 2025
ISBN 10: 102513527X ISBN 13: 9781025135274
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Radiation Effects on the Electrical Properties of Hafnium Oxide Based MOS Capacitors
Language: English
Published by Creative Media Partners, LLC, 2025
ISBN 10: 102513527X ISBN 13: 9781025135274
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Add to basketPaperback. Condition: new. Paperback. Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
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Add to basketHardcover. Condition: new. Hardcover. Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
