Gurram Devaraju (10 results)
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
Contact seller4-star sellerCondition: New
US$ 109.91
US$ 3.99 shippingShips within U.S.A.Quantity: 4 available
Condition: New.
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
Contact seller5-star sellerCondition: New
US$ 113.03
US$ 13.41 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
Paperback. Condition: Brand New. 156 pages. 8.66x5.91x0.36 inches. In Stock.
- Softcover
Seller: Mispah books, Redhill, SURRE, United KingdomMispah books
Contact seller4-star sellerCondition: New
US$ 200.32
US$ 33.53 shippingShips from United Kingdom to U.S.A.Quantity: 1 available
paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by LAP LAMBERT Academic Publishing Mrz 2016, 2016
- Softcover
- Print on Demand
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
Contact seller5-star sellerCondition: New
US$ 72.90
US$ 26.30 shippingShips from Germany to U.S.A.Quantity: 2 available
Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to…electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed. 156 pp. Englisch.
- Softcover
- Print on Demand
Seller: moluna, Greven, Germanymoluna
Contact seller5-star sellerCondition: New
US$ 59.66
US$ 56.01 shippingShips from Germany to U.S.A.Quantity: Over 20 available
Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Gurram DevarajuDr Devaraju Gurram is a Postdoctoral Fellow at Nanostructure s Group,University of Padova,Italy and Faculty in Physics at IIIT Basara,Telangana, India. Prof Anand P Pathak is a CSIR Emeri…tus Professor at School of Phys.
- Softcover
- Print on Demand
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
Contact seller4-star sellerCondition: New
US$ 112.88
US$ 8.72 shippingShips from United Kingdom to U.S.A.Quantity: 4 available
Condition: New. Print on Demand.
- Softcover
- Print on Demand
Seller: Biblios, frankfurt am main, HESSE, GermanyBiblios
Contact seller4-star sellerCondition: New
US$ 119.58
US$ 11.38 shippingShips from Germany to U.S.A.Quantity: 4 available
Condition: New. PRINT ON DEMAND.
Language: English
Published by LAP LAMBERT Academic Publishing Mär 2016, 2016
- Softcover
- Print on Demand
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
Contact seller5-star sellerCondition: New
US$ 72.90
US$ 68.60 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to elec…tronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 156 pp. Englisch.
- Softcover
- Print on Demand
Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 62.77
US$ 80.03 shippingShips from Germany to U.S.A.Quantity: 5 available
Taschenbuch. Condition: Neu. Swift Heavy Ion induced effects in III-V compound semiconductors | Ion beam modification studies of GaAs and GaN semiconductors | Devaraju Gurram (u. a.) | Taschenbuch | 156 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659854774 | Verantwortliche Person für die EU: preigu GmbH & C…o. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.
- Softcover
- Print on Demand
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
US$ 72.90
US$ 70.03 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to elect…ronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.
