Gurram Devaraju (10 results)

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Paperback. Condition: Brand New. 156 pages. 8.66x5.91x0.36 inches. In Stock.

Taschenbuch. Condition: Neu. Swift Heavy Ion induced effects in III-V compound semiconductors | Ion beam modification studies of GaAs and GaN semiconductors | Devaraju Gurram (u. a.) | Taschenbuch | 156 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659854774 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed. 156 pp. Englisch.

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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Gurram DevarajuDr Devaraju Gurram is a Postdoctoral Fellow at Nanostructure s Group,University of Padova,Italy and Faculty in Physics at IIIT Basara,Telangana, India. Prof Anand P Pathak is a CSIR Emeritus Professor at School of Phys.

Condition: New. PRINT ON DEMAND.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 156 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book deals with ion beam modifications and characterization of low dimensional semiconductors. For ion beams at velocities comparable to target electrons, the interaction is inelastic and induces competing processes leading to electronic and lattice defects. Effects are such that interfaces of multi quantum well structures change with ion beam conditions. The defect migration and annihilation induced by ion beam bombardment, as a function of electronic energy loss and fluence have been discussed. The initially strained and relaxed materials are further strained leading to band gap modification which is otherwise impossible to achieve. We have discussed the disorder activated modes and measured compressive strain as a function of electronic energy loss using Raman spectroscopy. Yellow and blue luminescence from Ga and N related defects in GaN have also been discussed. The band gap modification upon irradiation and subsequent rapid thermal annealing in GaAs related compound semiconductors is reported and discussed.