Ishiwara (73 results)
Published by J Applied Physics 1972
- Softcover
- Periodical
Seller: Larry W Price Books, Portland, U.S.A.Larry W Price Books
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Add to basketPamphlet. Condition: Very Good. Vol 43, No 3, pp. 1268-1273, Illus, 4to, Extracted from orig vol, thus begins with title page, trimmed & stapled pamphlet, else VG.

- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Condition: New. In.

- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Condition: New. In.

- Softcover
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Condition: New. In.

Language: English
Published by Dordrecht, Springer. 2016
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Hardcover
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermanyUniversitätsbuchhandlung Herta Hold GmbH
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XVIII, 347 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

Language: English
Published by Singapore, Springer. 2020
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Hardcover
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermanyUniversitätsbuchhandlung Herta Hold GmbH
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2nd ed. 2020. XIV, 425 p. Hardcover. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Topics in Applied Physics, 131. Sprache: Englisch.

Ferroelectric-Gate Field Effect Transistor Memories. Device Physics and Applications.
Park, Byung-Eun/Ishiwara, Hiroshi/Okuyama, Masanori/Sakai, Shigeki/Yoon, Sung-Min (Hrsg.)
Language: English
Published by Singapore, Springer Singapore. 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermanyUniversitätsbuchhandlung Herta Hold GmbH
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2nd ed. 2020. 16 x 24 cm. XIV, 425 S. XIV, 425 p. 313 illus., 183 illus. in color. Softcover (Topics in Applied Physics). Sprache: Englisch.

Language: English
Published by Springer 2016
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Hardcover
Seller: Phatpocket Limited, Waltham Abbey, United KingdomPhatpocket Limited
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Condition: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.

Language: English
Published by Springer 2016
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Hardcover
Seller: Antiquariat Bookfarm, Löbnitz, GermanyAntiquariat Bookfarm
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Hardcover. 347 S. Ex-library with stamp and library-signature in good condition, some traces of use. C-00991 9789402408393 Sprache: Englisch Gewicht in Gramm: 550.

Ferroelectric Random Access Memories. Fundamentals and Applications.
Ishiwara, Hiroshi/Okuyama, Masanori/Arimoto, Yoshihiro (Hrsg.)
Language: English
Published by Berlin/ Heidelberg, Springer Berlin. 2004
Series: Topics in Applied Physics, Book 8 of 37. Book 8 of 37 - Topics in Applied Physics
- Hardcover
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, GermanyUniversitätsbuchhandlung Herta Hold GmbH
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2004. 16 x 24 cm. XIII, 291 S. XIII, 291 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (Topics in Applied Physics). Sprache: E…nglisch.

Language: English
Published by Berlin, Springer 2004
- Hardcover
Seller: Antiquariat Bookfarm, Löbnitz, GermanyAntiquariat Bookfarm
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Add to basketHardcover. C-02152 Ex-library with Stamp and Library-Signature in Good Condition, Some Traces of Use Sprache: Englisch Gewicht in Gramm: 550.

Language: English
Published by SPRINGER NATURE 2016
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 347 | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Language: English
Published by Springer 2018
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Softcover
Seller: Books Puddle, New York, U.S.A.Books Puddle
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Condition: New. pp. 365.

Language: English
Published by Springer 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
Seller: Ria Christie Collections, Uxbridge, United KingdomRia Christie Collections
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Language: English
Published by Springer 2020
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Hardcover
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Language: English
Published by Springer 2018
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Softcover
Seller: preigu, Osnabrück, Germanypreigu
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Taschenbuch. Condition: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | xviii | Englisch | 2018 | Springer | EAN 9789402414165 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at…]springer[dot]com | Anbieter: preigu.

Language: English
Published by Springer 2020
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Hardcover
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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Condition: New.

Language: English
Published by Springer Netherlands, Springer Netherlands 2018
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric…memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Language: English
Published by Springer 2018
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. reprint edition. 347 pages. 9.25x6.10x0.83 inches. In Stock.

Language: English
Published by Springer Nature Singapore, Springer Nature Singapore 2020
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Hardcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory…has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Language: English
Published by Springer 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
Seller: Books Puddle, New York, U.S.A.Books Puddle
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More imagesLanguage: English
Published by Springer 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
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Taschenbuch. Condition: Neu. Ferroelectric-Gate Field Effect Transistor Memories | Device Physics and Applications | Byung-Eun Park (u. a.) | Taschenbuch | Topics in Applied Physics | xiv | Englisch | 2021 | Springer | EAN 9789811512148 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelber…g, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Language: English
Published by Springer 2018
Series: Topics in Applied Physics, Book 26 of 37. Book 26 of 37 - Topics in Applied Physics
- Softcover
Seller: Mispah books, Redhill, United KingdomMispah books
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paperback. Condition: New. New. book.

Language: English
Published by Springer, Springer 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric…memory has interesting fundamental device physics and potentially large industrial impact.Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Language: English
Published by Springer Nature 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
Seller: Revaluation Books, Exeter, United KingdomRevaluation Books
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Paperback. Condition: Brand New. 2nd edition. 439 pages. 9.25x6.10x1.06 inches. In Stock.

Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics, 93)
Ishiwara, Hiroshi [Editor]; Okuyama, Masanori [Editor]; Arimoto, Yoshihiro [Editor];
Language: English
Published by Springer 2004
Series: Topics in Applied Physics, Book 8 of 37. Book 8 of 37 - Topics in Applied Physics
- Hardcover
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Ferroelectric Random Access Memories: Fundamentals and Applications (Topics in Applied Physics, 93)
Ishiwara, Hiroshi [Editor]; Okuyama, Masanori [Editor]; Arimoto, Yoshihiro [Editor];
Language: English
Published by Springer 2004
Series: Topics in Applied Physics, Book 8 of 37. Book 8 of 37 - Topics in Applied Physics
- Hardcover
Seller: BennettBooksLtd, Los Angeles, U.S.A.BennettBooksLtd
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title.

Language: English
Published by Springer 2021
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Softcover
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Language: English
Published by Springer 2020
Series: Topics in Applied Physics, Book 30 of 37. Book 30 of 37 - Topics in Applied Physics
- Hardcover
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Ferroelectric Random Access Memories : Fundamentals and Applications
Ishiwara, Hiroshi; Okuyama, Masanori (EDT); Arimoto, Yoshihiro
Language: English
Published by Springer 2010
Series: Topics in Applied Physics, Book 8 of 37. Book 8 of 37 - Topics in Applied Physics
- Softcover
Seller: GreatBookPrices, Columbia, U.S.A.GreatBookPrices
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