Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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First Edition
Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Thompson, Scott; Nouri, Faran; Lee, Wen-Chin; Tsai, Wilman. Series: MRS Proceedings. Num Pages: 205 pages, Illustrations. BIC Classification: TGM; TJFD3. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2006. 1st Edition. hardcover. . . . .
Language: English
Published by Cambridge University Press 11/7/2006, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Hardback or Cased Book. Condition: New. Transistor Scaling. Book.
Language: English
Published by Materials Research Society, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Condition: New. pp. ix + 205.
Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Condition: New. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. Editor(s): Thompson, Scott; Nouri, Faran; Lee, Wen-Chin; Tsai, Wilman. Series: MRS Proceedings. Num Pages: 205 pages, Illustrations. BIC Classification: TGM; TJFD3. Category: (U) Tertiary Education (US: College). Dimension: 228 x 152 x 18. Weight in Grams: 432. . 2006. 1st Edition. hardcover. . . . . Books ship from the US and Ireland.
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Add to basketHardcover. Condition: Brand New. 205 pages. 9.00x6.00x0.56 inches. In Stock.
Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - For the past four decades, geometric scaling of silicon CMOS transistors has enabled not only an exponential increase in circuit integration density - Moore's Law - but also a corresponding enhancement in the transistor performance. Simple MOSFET geometric scaling has driven the industry to date. However, as the transistor gate lengths drop below 35nm and the gate oxide thickness is reduced to 1nm, physical limitations such as off-state leakage current and power density make geometric scaling an increasingly challenging task. In order to continue CMOS device scaling, innovations in device structures and materials are required and the industry needs a new scaling vector. Starting at the 90 and 65nm technology generation, strained silicon has emerged as one such innovation. Other device structures such as multigate FETs may be introduced to meet the scaling challenge. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured.
Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Add to basketHardcover. Condition: Brand New. 205 pages. 9.00x6.00x0.56 inches. In Stock. This item is printed on demand.
Language: English
Published by Materials Research Society, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Add to basketHardback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Language: English
Published by Materials Research Society, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Condition: New. Print on Demand pp. ix + 205 Illus.
Language: English
Published by Materials Research Society, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Condition: New. PRINT ON DEMAND pp. ix + 205.
Language: English
Published by Cambridge University Press, 2006
ISBN 10: 1558998691 ISBN 13: 9781558998698
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transis.