Spruytte (16 results)

Softcover. Condition: Très bon. Kunz, Jürgen F. (illustrator). Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Very good. Ammareal gives back up to 15% of this item's net price to charity organizations.

143pp. sm.8vo. pb.

Soft cover. Condition: Good. English translation of a French book published in 1977. 21cm x 13.5cm, 135 pages, Illustrated. Some marks to the covers. Clean and complete within.

Soft cover. Condition: Very good. 135p, many photos. Trans. by Mary Littauer. The author reconstructed and drove ancient Egyptian and Greek chariots and harness in order to understand traditional equine-powered traction of 2-wheeled vehicles--shoulder, breast, and frontal. Comparing these systems with later ones, he concluded that early harness systems were more varied and efficient than often believed. This account of a very interesting and valuable experiment has become somewhat hard to find. Can be sent outside the US for less than the default shipping rate. First English- language edition (1st pub. in French, 1977).

30 novembre 1977, broché, 144pp avec 37 planches hors texte - très bon état.

Couverture souple. Condition: Neuf. Kunz, Jürgen F. (illustrator). 1ère Édition. Paris 1996.1 Volume/1. -- NEUF -- Broché ,couverture rempliée illustrée . Format in-8°( 23 x 15,2 cm )( 368 gr ). -------- XV-150 pages avec une trés riche iconographie , photos , illustrations N&B et couleurs.************** "Cavalier et méhariste dans l'armée,maître d'attelage diplomé de la fédération équestre française dans le civil,l'auteur , après des études experimentales sur l'attelage nous livre ici une oeuvre d'une pertinenre érudition." *********.

Condition: Très bon. Kunz, Jürgen F. (illustrator). Merci, votre achat aide à financer des programmes de lutte contre l'illettrisme.

Couverture souple. Condition: bon. R320161752: 1977. In-8. Broché. Etat d'usage, Couv. convenable, Dos satisfaisant, Mouillures. 143 pages - avec flyer publicitaire du livre - avec lettre dactylographié signé de l'éditeur D.Bechu - nombreuses planches de photos en noir et blanc - quelques dessins en nir et blanc dans et hors texte - mouillures en pied de page à l'intérieur de l'ouvrage sans réelle conséquence sur la lecture. . . . Classification Dewey : 636.1-Chevaux.

Condition: Hervorragend. Zustand: Hervorragend | Sprache: Niederländisch | Produktart: Bücher | Keine Beschreibung verfügbar.

Paperback. Condition: Fair. 1. Lichte foxing op kaft; kaft beschadigd Dutch Oscar Verhaeghe-hulde 15 mei 1967 is een herdenkingsbrochure uitgegeven naar aanleiding van de tiende verjaardag van het overlijden van Oscar Verhaeghe. De publicatie bevat bijdragen van verschillende auteurs die zijn leven, persoonlijkheid en culturele betekenis belichten. Centraal staan een biografische schets door André Demedts en een in memoriam door Antoon Van Ryckeghem. Daarnaast bevat de brochure reflecties en herinneringen die samen een eerbetoon vormen aan Verhaeghe en zijn plaats binnen het culturele en literaire leven. Het geheel wordt aangevuld met een ingeplakte authentieke foto, wat de publicatie ook documentair waardevol maakt.

Paperback. Condition: Good. 1. Verkleuring. Dutch Een bundel van toespraken / voordrachten die gehouden werden tijdens de studiedagen in september 1924 in het klooster der Grauwe Zusters te Roeselare. De voordrachten ? onder de titel ?Word wat gij zijt? ? richten zich op Vlaamse en geestelijke thema?s binnen de context van de Vlaamse beweging en katholiek-Vlaams milieu. De teksten zijn bedoeld als morele, religieuze en culturele reflecties en oproepen, en getuigen van het engagement van de West-Vlaamsche Gouwbond der Katholieke Vlaamsche Meisjes. Jacob Van Artevelde - Philips Van Artevelde - Willem van Orajz - Oratorio Franciscus van Tinel.

Paris, Ed. de la Maison des sciences de l'homme & Ed. Crépin-Leblond, 1977-1996. 2 ouvrages petits in-8 brochés, 1er ouvrage : couv. rempliée ill. en coul., 146 pp., 16 pl. de reprod. photogr. en coul., 112 ill. in-t., 3 cartes, bibliographie, résumé en anglais in fine, envoi manuscrit de l'auteur à Jehan Desanges. 2ème ouvrage : couv. ill. en coul., 143 pp., très nb. reprod. photogr., ill., dessins etc. en n/b. in-t. /20E Très bonne condition.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 °C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um. 112 pp. Englisch.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Spruytte SylviaSylvia Spruytte received a Ph.D. in Material Science and Engineering at Stanford University in 2001, a M.S. in Electrical Engineering at Stanford University in 1998 and a M.S. in Material Science and Engineering at Kat.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 °C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 112 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - To enable devices operating at 1.3 um on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of GaInNAs is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. Device quality material is obtained only after a rapid thermal anneal at 760 °C for 1 min. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen diffusion is more pronounced than indium diffusion. To limit nitrogen diffusion, the GaInNAs QWs were inserted between GaAsN barriers. This also resulted in longer wavelength emission due to decreased carrier confinement energy. This new active region resulted in devices emitting at 1.3 um.