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Poly-SiGe for MEMS-above-CMOS Sensors (Springer Series in Advanced Microelectronics, 44)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 133.09
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Poly-SiGe for MEMS-above-CMOS Sensors (Springer Series in Advanced Microelectronics, 44)
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
US$ 133.09
US$ 16.10 shipping
Ships from United Kingdom to U.S.A.Quantity: Over 20 available
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US$ 131.32
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Poly-SiGe for MEMS-above-CMOS Sensors
Language: English
Published by Springer Netherlands, 2013
ISBN 10: 9400767986 ISBN 13: 9789400767980
US$ 110.32
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Condition: New. pp. 216.
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Poly-SiGe for MEMS-above-CMOS Sensors
Language: English
Published by Springer Netherlands, 2015
ISBN 10: 9401781400 ISBN 13: 9789401781404
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Add to basketHardcover. Condition: Brand New. 2014 edition. 200 pages. 9.25x6.25x0.75 inches. In Stock.
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Condition: New. pp. 199.
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Poly-SiGe for MEMS-above-CMOS Sensors
Language: English
Published by Springer Netherlands, 2013
ISBN 10: 9400767986 ISBN 13: 9789400767980
Condition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 żm Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.
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Add to basketHardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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Add to basketCondition: New. Print on Demand pp. 216 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Condition: New. PRINT ON DEMAND pp. 216.
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Add to basketCondition: New. Print on Demand pp. 199.
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Condition: New. PRINT ON DEMAND pp. 199.
