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Introduction Junctionless Double Gate by Dhiman Gaurav (8 results)
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
Condition: New.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
US$ 82.86
Convert currencyUS$ 33.41 shipping from United Kingdom to U.S.A.Quantity: 1 available
Add to basketPaperback. Condition: Brand New. 60 pages. 8.66x5.91x0.14 inches. In Stock.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing Mär 2019, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germany
Seller rating 5 out of 5 stars
US$ 47.75
Convert currencyUS$ 69.71 shipping from Germany to U.S.A.Quantity: 2 available
Add to basketTaschenbuch. Condition: Neu. Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.Books on Demand GmbH, Überseering 33, 22297 Hamburg 60 pp. Englisch.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing Mrz 2019, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germany
Seller rating 5 out of 5 stars
US$ 47.75
Convert currencyUS$ 26.72 shipping from Germany to U.S.A.Quantity: 2 available
Add to basketTaschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. 60 pp. Englisch.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
US$ 65.08
Convert currencyUS$ 8.69 shipping from United Kingdom to U.S.A.Quantity: 4 available
Add to basketCondition: New. Print on Demand.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
US$ 71.07
Convert currencyUS$ 11.56 shipping from Germany to U.S.A.Quantity: 4 available
Add to basketCondition: New. PRINT ON DEMAND.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
US$ 40.99
Convert currencyUS$ 56.92 shipping from Germany to U.S.A.Quantity: Over 20 available
Add to basketCondition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dhiman GauravGaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 2003,and the M.Tech. and Ph.D. deg.
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Introduction to Junctionless Double Gate MOSFET
Published by LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6139462487 ISBN 13: 9786139462483
Language: English
US$ 48.93
Convert currencyUS$ 70.34 shipping from Germany to U.S.A.Quantity: 1 available
Add to basketTaschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.
