Modelling Basic Parameters Non Conventional by Swapnadip (8 results)
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Taschenbuch. Condition: Neu. Modelling of basic parameters for non-conventional MOSFETs | Swapnadip De | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206739814 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu….
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Language: English
Published by LAP LAMBERT Academic Publishing Jul 2023 2023
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOS…FETs are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed. 64 pp. Englisch.
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFET…s. Advanced MOSFETs are non-uniformly do.
Language: English
Published by LAP LAMBERT Academic Publishing Jul 2023 2023
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Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000
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Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs… are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 64 pp. Englisch.
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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this book, the channel engineering and the gate engineering techniques are combined to form novel device structures proposed as Single-halo Dual Material Gate(SHDMG) and Double-halo Dual Material gate(DHDMG) MOSFETs. Advanced MOSFETs…are non-uniformly doped as a result of complex process flow. Therefore, one of the key factors to model the characteristic parameters accurately is to model its non uniform doping profile. The book also presents an analytical sub threshold surface potential, threshold voltage, drift-diffusion theory based drain current and transconductance model for linear and Gaussian profile based SHDMG and DHDMG n-MOSFETs operating up to 40nm regime. A quasi-Fermi potential based analytical sub threshold drain current model for linear as well as Gaussian profile based SHDMG and DHDMG MOS transistor, incorporating the fringing fields at the two ends of the device is also proposed.
