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Mos Interface Physics Process by Wang Shengkai (31 results)
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Condition: As New. Unread book in perfect condition.
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Mos Interface Physics, Process and Characterization
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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Mos Interface Physics, Process and Characterization
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MOS Interface Physics, Process and Characterization
Language: English
Published by Taylor & Francis Ltd, 2021
ISBN 10: 103210628X ISBN 13: 9781032106281
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
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MOS Interface Physics, Process and Characterization
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Add to basketPaperback. Condition: Brand New. 174 pages. 9.00x6.00x0.40 inches. In Stock.
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MOS Interface Physics, Process and Characterization
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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MOS Interface Physics, Process and Characterization
Language: English
Published by CRC Press 2021-10-12, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
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MOS Interface Physics, Process and Characterization 1st Edition
Language: English
Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
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MOS Interface Physics, Process and Characterization
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
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MOS Interface Physics, Process and Characterization
Language: English
Published by Taylor & Francis Ltd, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
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Add to basketHardback. Condition: New. New copy - Usually dispatched within 4 working days.
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MOS Interface Physics, Process and Characterization 1st Edition
Language: English
Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Condition: New.
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MOS Interface Physics, Process and Characterization
Seller: Ria Christie Collections, Uxbridge, United Kingdom
Seller rating 5 out of 5 stars
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MOS Interface Physics, Process and Characterization 1st Edition
Language: English
Published by H N H International Limited, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Condition: New.
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Add to basketHardcover. Condition: Brand New. 161 pages. 9.00x6.00x0.75 inches. In Stock.
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PAP. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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MOS Interface Physics, Process and Characterization
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
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Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 1.
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MOS Interface Physics, Process and Characterization
Language: English
Published by Taylor & Francis Ltd, 2021
ISBN 10: 1032106271 ISBN 13: 9781032106274
Seller: THE SAINT BOOKSTORE, Southport, United Kingdom
Seller rating 5 out of 5 stars
US$ 137.31
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Ships from United Kingdom to U.S.A.Quantity: 5 available
Add to basketHardback. Condition: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
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HRD. Condition: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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MOS Interface Physics, Process and Characterization
Seller: PBShop.store UK, Fairford, GLOS, United Kingdom
Seller rating 4 out of 5 stars
US$ 161.88
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Add to basketHRD. Condition: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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US$ 124.54
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Add to basketGebunden. Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Shengkai Wang is a professor in the Institute of Microelectronics, Chinese Academy of Sciences. He received Ph.D. from the University of Tokyo in 2011 and has been engaged in Ge, III-V, SiC in MOS technology. He has published more than 1.
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Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices. This book contains experimental examples focusing on MOS and will be a reference for academics and postgraduates in the field of microelectronics.
